Performance of single-and dual-color detectors using InAs/GaSb strained layer superlattices

摘要

We report on a heterojunction band gap engineered single- and dual-color photodetectors with pBiBn and pBp architecture, respectively. The detailed optical and electrical characterization of these devices has been performed. The pBiBn detector demonstrated a specific detectivity of 3 × 10¹⁰ Jones at 8m wavelength and a specific detectivity of 5 × 10¹¹ Jones and 2.6 × 10¹⁰ Jones for MWIR (at 5 μm) and LWIR (9 μm) absorbers, respectively, has been measured for dual-band pBp detector. Observed performance of unipolar barrier devices is superior to the performance of homojunction single-and dual-color detectors based on the same material system and operating at the same wavelength range.