Single-event transient sensitivity to gate bias in InAlSb/InAs/AlGaSb high electron mobility transistors

摘要

We have characterized the single-event transient sensitivity to gate bias of InAlSb/InAs/AlGaSb high electron mobility transistors through experiments and simulations. These depletion-mode transistors exhibit increased charge collection as the gate bias moves from depletion toward threshold, similar to the response observed in floating body silicon-on-insulator devices. Maximum charge collection occurs near threshold, decreasing as the gate bias moves toward accumulation. The interplay between the longitudinal electric field in the channel and the vertical electric field underneath the gate affects the net radiation-generated charge in the InAs channel, which is responsible for the observed experimental trends.