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Lower-bits cache for low power STT-RAM caches

机译:低位高速缓存用于低功耗STT-RAM高速缓存

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As power-efficient design becomes more important, spin-transfer torque RAM (STT-RAM) has drawn a lot of attention due to its ability to meet both high performance and low power consumption. However, its high write energy incurs an increase of dynamic power consumption and may offset power saving due to its low static power. This paper proposes a novel technique called lower-bits caches for reducing write activities of STT-RAM L2 caches. Based on the observation that upper bits of data are not changed as frequently as lower bits in most applications, the technique tries to hide frequent bit changes in lower bits from the L2 cache. Experimental results show that our architecture reduced 25 percent of energy consumed by the L2 cache and slightly improved performance at the same time compared to the STT-RAM baseline.
机译:随着高能效设计变得越来越重要,自旋转移转矩RAM(STT-RAM)由于能够满足高性能和低功耗的要求而备受关注。但是,其较高的写入能量会导致动态功耗的增加,并且由于其较低的静态功耗而可能抵消功耗的节省。本文提出了一种称为低位高速缓存的新颖技术,用于减少STT-RAM L2高速缓存的写入活动。基于观察到数据的高位在大多数应用程序中不会像低位那样频繁地变化,该技术试图从L2高速缓存中隐藏低位中的频繁位变化。实验结果表明,与STT-RAM基准相比,我们的体系结构减少了L2缓存消耗的25%的能量,同时性能略有提高。

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