A K-band power amplifier with advanced performance boosted techniques

摘要

A K-band 0.18-µm CMOS power amplifier (PA) with advanced performance boosted techniques is presented in this paper. This PA consists of two stages and cross-coupled pairs. To improve the performance in terms of gain, output power, and PAE, the cross-coupled pairs are utilized in this design. Based on this technique, the PA's gain can be boosted from 13.7 dB to 20.6 dB. The saturated output power (Psat) can be enhanced 2 dB, and the power-added efficiency (PAE) is increased from 3.7% to 4.9%. Moreover, small inductors are inserted between MOSFETs for peaking parasitic capacitances, leading to a further enhancement of power gain. By utilizing these advanced techniques, performance of this PA is effectively boosted.