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A High Efficiency 780 MHz GaN Envelope Tracking Power Amplifier

机译:高效的780 MHz GaN包络跟踪功率放大器

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A high efficiency GaN envelope tracking power amplifier (ETPA) operated at 780 MHz, corresponding to LTE band class 14, is presented. The ETPA was tested with both a 6.6 dB PAPR WCDMA signal and a 7.5 dB PAPR 10 MHz 16 QAM LTE signal. Under the WCDMA signal, a drain efficiency of ~70% with 13.5 dB of gain and 28.6 W of output power was measured. The corresponding NRMSE, ACPR1, and ACPR2 were 1.51%, -45 dBc, and -51 dBc, respectively. For the 10 MHz LTE signal, a drain efficiency of 60% with 13.6 dB of gain and 23W of output power was measured. The corresponding EVM, ACPR1, and ACPR2 were 3%, -45 dBc, and -46 dBc, respectively. Using DPD that corrects for memory effects, results that meet the standard's specifications were obtained. To the best of the author's knowledge, the efficiency values presented here set a new record for power amplifier performance under high PAPR signals for both 5 MHz and 10 MHz modulation bandwidth signals.
机译:提出了一种工作在780 MHz的高效GaN包络跟踪功率放大器(ETPA),对应于LTE频段等级14。使用6.6 dB PAPR WCDMA信号和7.5 dB PAPR 10 MHz 16 QAM LTE信号对ETPA进行了测试。在WCDMA信号下,测得的漏极效率约为70%,增益为13.5 dB,输出功率为28.6W。相应的NRMSE,ACPR1和ACPR2分别为1.51%,-45 dBc和-51 dBc。对于10 MHz LTE信号,测得的漏极效率为60%,增益为13.6 dB,输出功率为23W。相应的EVM,ACPR1和ACPR2分别为3%,-45 dBc和-46 dBc。使用纠正记忆效应的DPD,可以获得符合标准规格的结果。据作者所知,此处给出的效率值为5 MHz和10 MHz调制带宽信号在高PAPR信号下的功率放大器性能创造了新纪录。

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