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Modeling and laboratory scale proof of concept of the horizontal ribbon growth process: Application to silicon wafer manufacturing

机译:水平碳带生长过程的概念建模和实验室规模证明:在硅片制造中的应用

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In this work we focus on the development of the Horizontal Ribbon Growth technique to produce highly pure silicon wafers for use in solar cells. We divide this preliminary work in two parts: a small scale experiment and the development of mathematical models to describe the crystallization phenomena. We begin by constructing a laboratory scale experiment to demonstrate the HRG concept using water as the working fluid. We made use of the fact that ice floats on water just like silicon would float on top of its melt. Therefore it is possible to conveniently test and analyze the operability of this technique. We find that the initial seeding process needs to be carefully controlled in order to extract a uniform wafer. Appropriate surface cooling and wall heating are necessary to guarantee the continuous formation of an ice film. We then develop simple mathematical models to predict the crystallization rate and thermal profiles of the system. We state that the driving force for crystallization is convective cooling and the film grows in one direction (downwards). Finally we propose how to validate the model using experimental data and how to extend the work to grow silicon ribbons.
机译:在这项工作中,我们专注于水平带状生长技术的开发,以生产用于太阳能电池的高纯度硅晶片。我们将此初步工作分为两部分:小规模实验和描述结晶现象的数学模型的开发。我们从构建实验室规模的实验开始,以水为工作液来演示HRG概念。我们利用了这样一个事实,冰就像在硅熔体上漂浮一样,漂浮在水上。因此,可以方便地测试和分析该技术的可操作性。我们发现,初始播种过程需要仔细控制以提取均匀的晶圆。必须进行适当的表面冷却和壁加热,以确保连续形成冰膜。然后,我们开发简单的数学模型来预测系统的结晶速率和热曲线。我们指出,结晶的驱动力是对流冷却,薄膜沿一个方向(向下)生长。最后,我们提出如何使用实验数据验证模型,以及如何扩展工作以生长硅带。

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