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High performance single In2Se3 nanowire photodetector

机译:高性能单In2Se3纳米线光电探测器

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The single In2Se3 nanowire photodetectors were fabricated and the performance characteristics of the NW devices were systematically investigated. The single In2Se3 NW photodetectors show high and stable photoresponse at wide light wavelength (254–800 nm) and temperature range (7–300 K). The spectra response curve indicates the absorption coefficient of the In2Se3 NWs at certain wavelength dominates the performance of the devices. The good linearity of the photocurrents with the incident irradiation over a wide wavelength range has been obtained, indicating the In2Se3 nanowire photodetector works under a typical light dependent resistor mode.
机译:制作了单个In2Se3纳米线光电探测器,并系统地研究了NW器件的性能特征。单个In2Se3 NW光电探测器在宽的光波长(254–800 nm)和温度范围(7–300 K)下显示出高而稳定的光响应。光谱响应曲线表明In2Se3 NW在特定波长下的吸收系数决定了器件的性能。已经获得了在宽波长范围内随入射辐射产生的光电流的良好线性,这表明In2Se3纳米线光电探测器在典型的光敏电阻器模式下工作。

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