On chip high voltage single clock swing enhanced charge pump circuit in 0.18 #x00B5;m technology

摘要

In this paper, a new charge pump circuit which uses single clock swing enhanced scheme to increase the output voltage is proposed. The charge pump circuitry plays a very critical role in energy harvesting, because not only it influences how much power is being extracted from the harvester, but also that its intrinsic power loss affects the net output power delivered. The charge transfer capability of a charge pump power converter depends on its implementation technology, input output voltages, circuit topology, transistor sizing, and the number of stages it has [1]. The proposed charge pump circuit is simulated in Mentor Graphics, using 0.18 µm CMOS technology library provided by TSMC. The proposed charge pump circuit achieves a higher output voltage than a traditional Dickson Charge pump. With a 1.2 V input applied, the proposed 8-stage circuit can reach 76.09 V, compared to traditional one which reaches up to 9.07 V at no load.