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The evolution of scaling from the homogeneous era to the heterogeneous era

机译:从同质时代到异质时代的尺度演变

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Traditional MOSFET scaling served our industry well for more than three decades by providing continuous improvements in transistor performance, power and cost. This was the era of homogeneous scaling where similar materials and device structures were scaled from generation to generation and served a wide range of integrated circuits from memory to logic applications. Traditional scaling ran out of steam in the early 2000s due mainly to the inability to further scale the SiO2 gate oxide and this ushered in the beginning of the heterogeneous era where new materials and new device structures are being continually introduced to deliver the expected benefits of scaling. Going forward, an ever wider range of device types will be needed and the challenge we face is how to identify, develop and manufacture these revolutionary devices, and also how to integrate heterogeneous devices into compelling products.
机译:传统的MOSFET缩放技术通过不断提高晶体管的性能,功耗和成本,在整个行业超过三十年中一直为我们服务。在同质缩放的时代,相似的材料和器件结构世代相传,并服务于从存储器到逻辑应用的各种集成电路。传统的氧化皮在2000年代初期就没有用了,这主要是由于无法进一步氧化SiO 2 栅氧化层,这迎来了异质时代的开始,新材料和新器件结构不断地出现引入以实现扩展的预期收益。展望未来,将需要越来越广泛的设备类型,我们面临的挑战是如何识别,开发和制造这些革命性的设备,以及如何将异构设备集成到引人注目的产品中。

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