Experimental demonstration and analysis of DNA passage in nanopore-based nanofluidic transistors

摘要

We investigate DNA passage through a nanofluidic transistor (NFT) composed of large diameter nanopores (~200nm) with an embedded metal gate. The nanopores are large enough to be made by currently available photolithography process for manufacturability. We observe that the NFT is capable of electrostatic control of DNA capture rate, the equivalent of current in the electron transistor, with similar operating principle as their electron device counterpart.