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A 3–5-GHz LNA and mixer for an UWB RF front-end

机译:用于UWB射频前端的3–5 GHz LNA和混频器

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A receiver front-end for an Ultra-Wide-Band system in 33.6–5-GHz band is reported. An on-chip balun is implemented in between the low noise amplifier and the mixer, which makes the input matching less stringent as compared to the structure of putting the on-chip balun prior to the LNA. Consequently, the low noise amplifier can be single-ended, resulting in low power and low area; while the differential mixer provides rejection LO feedthrough and other common mode effects. The chip is fabricated in a 90-nm CMOS process. The measurements show a noise figure of 3.6–4.4dB over the 3–5GHz band, a conversion gain of 24.5–29dB, and a third order input referred intercept point of −dBm. The current consumption is 13.7mA for the LNA, and 4mA for the mixer with a 1.2-V voltage supply.
机译:报告了33.6–5 GHz频段的超宽带系统的接收机前端。在低噪声放大器和混频器之间实现了片内平衡-不平衡转换器,与将片内平衡-不平衡转换器置于LNA之前的结构相比,它使输入匹配的严格性降低。因此,低噪声放大器可以是单端的,从而实现了低功耗和小面积。差分混频器提供抑制本振馈通和其他共模效果。该芯片采用90纳米CMOS工艺制造。测量结果表明,在3–5GHz频带上的噪声系数为3.6–4.4dB,转换增益为24.5–29dB,三阶输入参考截点为-dBm。 LNA的电流消耗为13.7mA,带1.2V电源的混频器的电流消耗为4mA。

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