900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

摘要

A sub-1dB NF fully integrated low noise amplifier in a 0.25μm SiGe:C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.