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SYNTHESIS AND CHARACTERIZAITON OFSPACE-SURVIVABLE POSS-KAPTON~?-POLYIMIDES

机译:可空间生存的Poss-Kapton〜?-聚酰亚胺的合成与表征

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Kapton~? is used extensively in spacecraft thermal blankets, solar arrays, and spacerninflatable structures. This material is chosen due to its thermal and physical properties,rnhowever it degrades severely in low Earth orbit (LEO) by atomic oxygen (AO). SiO_2rncoatings impart remarkable oxidation resistance to Kapton~?, yet imperfections in the SiO_2rnapplication process and micrometeoroid debris impact in orbit may damage the SiO_2rncoating and lead to Kapton~? erosion. Polyhedral oligomeric silsesquioxane (POSS) is arnsilicon and oxygen cage-like structure surrounded by organic groups. POSS-diamine andrnthe monomers of Kapton~? were polymerized and cured to form POSS-polyimide (POSSPI)rnfilms. These POSS-copolymers are self-passivating by the formation of a silica layerrnupon exposure to AO. Evidence of a SiO_2 passivation layer has been shown by X-rayrnphotoelectron spectroscopy studies on AO exposed 3.5, 7.0, and 8.75 weight % Si8O11rnmain chain (MC)-POSS-PI samples with erosion yields of 3.7, 0.98, and 0.3 percent,rnrespectively, of the erosion yield for Kapton H~? at a fluence of 8.5 × 10~(20) O atoms cm~(-2).rnThe self-passivation of POSS-Pis has also been demonstrated by monitoring a 1 micronrndeep scratch in AO-exposed main-chain-POSS-PI (MC-POSS-PI) after a secondrnexposure to AO. A study of the effect of temperature on the AO erosion of POSS-PIrnsamples showed that although the erosion of MC-POSS-Pis increased with temperature,rnthey erode significantly less than their no-POSS analogues at elevated temperatures.rnPOSS-polyimides flown for 3.9 years in low Earth orbit on the Materials InternationalrnSpace Station Experiment (MISSE) showed dramatically increased survival relative to 0
机译:卡普顿〜?广泛用于航天器的热毯,太阳能电池板和可膨胀的隔离结构中。选择该材料是由于其热和物理特性,但是在低地球轨道(LEO)中会由于原子氧(AO)严重降解。 SiO_2涂层对Kapton?具有显着的抗氧化性,但SiO_2rn涂覆过程中的缺陷和微流星体碎片在轨道上的撞击可能会破坏SiO_2涂层并导致Kapton?α。侵蚀。多面体低聚倍半硅氧烷(POSS)是由有机基团包围的arnsilicon和氧笼状结构。 POSS-二胺与Kapton的单体聚合并固化以形成POSS-聚酰亚胺(POSSPI)薄膜。这些POSS共聚物通过在暴露于AO时形成二氧化硅层而自我钝化。 X射线光电子能谱研究表明,对AO暴露的3.5、7.0和8.75 wt%的Si8O11主链(MC)-POSS-PI样品的X射线光电子能谱研究表明,SiO_2钝化层的腐蚀产率分别为3.7%,0.98%和0.3%, Kapton H〜?的侵蚀产量?在8.5×10〜(20)O原子cm〜(-2)的注量下.rn还通过监测AO暴露的主链-POSS-PI中1微米深的划痕来证明POSS-Pis的自钝化(第二次暴露于AO之后。对温度对POSS-PIrn样品的AO腐蚀的影响的研究表明,尽管MC-POSS-Pis的腐蚀随温度增加而增加,但在高温下它们的腐蚀明显小于其no-POSS类似物.rnPOSS-聚酰亚胺的飞行时间为3.9在材料国际空间站实验(MISSE)上的低地球轨道运行多年表明,相对于0,生存大大增加了

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