首页> 外文会议>Nano Science and Technology Institute(NSTI) Nanotechnology Conference and Trade Show(NSTI Nanotech 2006) vol.3 >Silicon Carbide Micro/Nano Systems for Harsh Environment and Demanding Applications
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Silicon Carbide Micro/Nano Systems for Harsh Environment and Demanding Applications

机译:适用于恶劣环境和苛刻应用的碳化硅微/纳米系统

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Microano systems enable the development of smart products and systems by augmenting the computational ability of microelectronics with the perception and control capabilities of sensors and actuators. Microano systems are also known as micro- and nano-electromechanical systems (MEMS and NEMS), and have been commercialized in a wide range of applications including crash sensing, blood pressure measurement, optical projection, fluid flow control to name a few. Silicon, in single- and polycrystalline form, has traditionally been the platform semiconductor material underpinning the fabrication of the mechanical and electronic elements of microano systems. However, the material properties of silicon impose limitations on its use in harsh environment and demanding applications. Such applications involve operation in the presence of high temperatures, corrosive media, high shock loads, erosive flows, and/or high radiation, or involve performance requirements for the mechanical elements that are beyond silicon's capabilities. Silicon carbide (SiC) is an alternative platform semiconductor material that enables such applications because of its wider bandgap and higher melting/sublimation temperature, elastic modulus, fracture toughness, hardness, chemical inertness, and thermal conductivity. This overview highlights recent material, process, and device advances in the context of the effort to establish a SiC microano systems technology. This technology enables sensing and actuation in propulsion, power generation, resource exploration, nuclear reactor instrumentation, deep space exploration, and communications to name a few.
机译:微型/纳米系统通过利用传感器和执行器的感知和控制能力来增强微电子的计算能力,从而实现智能产品和系统的开发。微/纳系统也被称为微和纳机电系统(MEMS和NEMS),并且已在包括碰撞检测,血压测量,光学投影,流体流量控制在内的众多应用中实现了商业化。传统上,单晶和多晶形式的硅一直是支撑微/纳米系统的机械和电子元件制造的平台半导体材料。然而,硅的材料特性限制了其在恶劣环境和苛刻应用中的使用。这样的应用涉及在高温,腐蚀性介质,高冲击载荷,侵蚀性流和/或高辐射的情况下进行操作,或者涉及超出硅能力的机械元件的性能要求。碳化硅(SiC)是一种替代的平台半导体材料,由于其较宽的带隙和较高的熔化/升华温度,弹性模量,断裂韧性,硬度,化学惰性和导热性,因此可实现此类应用。本概述重点介绍了在建立SiC微米/纳米系统技术的努力背景下最新的材料,工艺和器件的进展。这项技术可以在推进,发电,资源勘探,核反应堆仪器,深空探测和通信等领域进行传感和驱动。

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