首页> 外文会议>2006 7th International Conference on Electronics Packaging Technology(ICEPT 2006) >Finite Element Analysis of TSOP Silicon Die Crack Issue during Molding Process
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Finite Element Analysis of TSOP Silicon Die Crack Issue during Molding Process

机译:成型过程中TSOP硅模裂纹问题的有限元分析

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摘要

In molding process, there is a step to release molded package blocks from the moulds by ejection pins. Silicon die crack failures might occur in some kind of thin small outline package (TSOP) in this mould-release step. In this work, mould-release process for a TSOP product is simulated by finite element method to clarify the mechanism of silicon die crack failures. Our analysis demonstrates that some adhesion area by organic contamination on mould inner surface, during mould-release step, may impede package block to be released smoothly from the mould, leading to locally built internal stress within silicon and causing die crack failures. Die crack risks with adhesion area in different size, shape and position are compared and high-risk conditions are defined. Die crack failure can be reduced in packages using high elastic molding compound (MC).
机译:在模制过程中,有一个步骤通过顶针将模制的包装块从模具中释放出来。在此脱模步骤中,某些薄型小外形封装(TSOP)可能会发生硅芯片开裂失败。在这项工作中,通过有限元方法对TSOP产品的脱模过程进行了仿真,以阐明硅芯片裂纹破裂的机理。我们的分析表明,在脱模步骤中,由于模具内表面有机污染物造成的某些粘附区域,可能会阻止封装块从模具中顺利脱模,从而导致硅内部产生局部内部应力,并导致芯片破裂失败。比较了具有不同尺寸,形状和位置的粘合面积的模具破裂风险,并定义了高风险条件。使用高弹性模塑料(MC)可以减少封装中的模具破裂故障。

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