True pulse load-pull measurement setup for high power transistors characterization

摘要

In this paper we describe a new method of high power transistor characterization where a pulsed RF measurement system is integrated into a load-pull environment. The pulse synchronization mechanism between the vector network analyzer and, scalar power meter, and the rest of the system will be discussed, with emphasis on integration details and calibration fidelity. It will be shown that the system can characterize transistors with RF powers in excess of 200W under high reflection coefficient conditions.