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A Highly Integrated Dual Band CMOS Frequency Synthesizer and Its Application in a WLAN 802.11g Transceiver

机译:高度集成的双频带CMOS频率合成器及其在WLAN 802.11g收发器中的应用

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摘要

A dual-band frequency synthesizer with integrated VCOs has been designed and fabricated in commercial 0.25μm RFCMOS process for 2.4GHz 802.11 b/g applications. The RF side (2.1GHz) achieves -124 dBc/Hz phase noise performance at 1MHz offset and 0.9 degrees of integrated phase error. The IF side (75QMHz) achieves -130 dBc/Hz at 1MHz offset and 0.4 degrees of integrated phase error. The power up to synthesizer ready time is 40μS for both sides. The synthesizer has been implemented to a single-chip 802.11b/g RF transceiver. Bench testing has demonstrated excellent performance at 802.11g 54Mbps/64QAM operation mode.
机译:具有集成VCO的双频频率合成器已通过商用0.25μmRFCMOS工艺设计和制造,用于2.4GHz 802.11 b / g应用。 RF侧(2.1GHz)在1MHz偏移和0.9度积分相位误差下可实现-124 dBc / Hz的相位噪声性能。中频侧(75QMHz)在1MHz偏移和0.4度积分相位误差下达到-130 dBc / Hz。两侧合成器准备时间的功耗为40μS。该合成器已实现为单芯片802.11b / g RF收发器。基准测试证明了在802.11g 54Mbps / 64QAM操作模式下的出色性能。

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