Comparison of High Power IGBT, IGCT and ETO for Pulse Applications

摘要

This paper focuses on the comparison of the state-of-the-art high power devices. A behavioral power loss model is developed to conduct electro-thermal simulation of these devices. The junction temperature is observed through simulation. The high power devices are compared for pulse application based on losses and thermal handling capability. Moreover, device operation condition (current, voltage and frequency) can be optimized to maximize the utilization of the power switch.