首页> 外文会议>2001 International Microprocesses and Nanotechnology Conference, Oct 31-Nov 2, 2001, Shimane, Japan >Formation of Aluminum Nano-Dot Array by The Use of Nano-indentation and Anodic Oxidation
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Formation of Aluminum Nano-Dot Array by The Use of Nano-indentation and Anodic Oxidation

机译:纳米压痕和阳极氧化法形成铝纳米点阵

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Nanoholes tetragonal and trigonal array as well as Al dots tetragonal and hexagonal array was successfully formed on Si substrate by the use of AFM nano-indentation and anodic oxidation. The ordered array of nanoholes could be obtained only at the indenting interval that depended on the anodic voltage. It should be notified that Al dots hexagonal array with the nearest neighbor distance of 34nm was formed. For further shrinkage of the Al dots, reduction of the indenting interval at an adequate anodic voltage would be necessary.
机译:利用AFM纳米压痕和阳极氧化技术,在Si衬底上成功地形成了纳米四方和六方的纳米孔阵列和Al点四方和六方的阵列。只有在取决于阳极电压的压痕间隔下才能获得有序的纳米孔阵列。应当注意,形成了具有最接近的邻居距离34nm的Al点六角形阵列。为了进一步缩小Al点,必须在适当的阳极电压下减小压痕间隔。

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