Gate Control Optimization of Si/SiC Hybrid Switch Within Wide Power Rating Range

机译：宽额定功率范围内Si / SiC混合开关的栅极控制优化

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The following topics are dealt with: wide band gap semiconductors; silicon compounds; gallium compounds; III-V semiconductors; power MOSFET; switching convertors; DC-DC power convertors; high electron mobility transistors; aluminium compounds; semiconductor device models.

机译：涉及以下主题：宽带隙半导体；硅化合物;镓化合物III-V半导体；功率MOSFET;开关转换器； DC-DC电源转换器；高电子迁移率晶体管；铝化合物半导体器件模型。

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来源
《2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia》|2018年|265-269|共5页
会议地点 Xian(CN)
作者
Zongjian Li; Xi Jiang; Cheng Zeng; Zhizhi He; Jun Wang;
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作者单位

College of Electrical and Information Engineering, Hunan University, Changsha, China;

College of Electrical and Information Engineering, Hunan University, Changsha, China;

College of Electrical and Information Engineering, Hunan University, Changsha, China;

College of Electrical and Information Engineering, Hunan University, Changsha, China;

College of Electrical and Information Engineering, Hunan University, Changsha, China;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Junctions; Switches; Silicon carbide; MOSFET; Insulated gate bipolar transistors; Logic gates; Delays;

机译：结;开关;碳化硅; MOSFET;绝缘栅双极型晶体管;逻辑门;延迟;;
入库时间 2022-08-26 14:32:26

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1. Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range [J] . Li Zongjian, Wang Jun, Deng Linfeng, Trends in Ecology & Evolution . 2020,第5期

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2. Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction [J] . Jun Wang, Zongjian Li, Xi Jiang, IEEE Transactions on Power Electronics . 2019,第2期

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3. Widen the Zero-Voltage-Switching Range and Secure Grid Power Quality for An EV Charger Using Variable-Switching-Frequency Single-Dual-Phase-Shift Control [J] . Qi Tian, Kevin(Hua)Bai 中国电气工程学报(英文) . 2018,第001期

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4. Gate Control Optimization of Si/SiC Hybrid Switch Within Wide Power Rating Range [C] . Zongjian Li, Xi Jiang, Cheng Zeng, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia . 2018

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5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

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Gate Control Optimization of Si/SiC Hybrid Switch Within Wide Power Rating Range

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