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Common Mode Modeling and Reduction of GaN-based Full Bridge Inverters

机译:GaN基全桥逆变器的共模建模和简化

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Although GaN HEMTs show impressive improvements in characteristics compared with Si MOSFETs, the control circuits suffer from high common-mode (CM) noise caused by the high-speed switching actions. CM transient current will lead to failure of controllers and driver ICs if not adequately reduced. Lots of research have been conducted on the generation and propagation of the CM current, but mainly focus on a single phase-leg. This paper investigates the CM current of a full-bridge inverter. A CM propagation model is proposed, in which both phase-legs and all the signal and power paths are considered. The connection between the control ground and the power ground will lead to inequality of the phase-legs, which is also discussed in this paper. To reduce CM current, CM chokes and power supply with low isolation capacitance are employed. In addition, differential voltage sensing method that has high CM transient immunity is adopted. Experimental results on a 500W full-bridge inverter verify the effectiveness of the proposed analysis and methods.
机译:尽管GaN HEMT与Si MOSFET相比在特性上取得了令人瞩目的改善,但控制电路仍遭受由高速开关动作引起的高共模(CM)噪声的困扰。如果未充分减小,CM瞬态电流将导致控制器和驱动器IC发生故障。已经对CM电流的产生和传播进行了大量研究,但主要集中在单个相脚上。本文研究了全桥逆变器的CM电流。提出了一种CM传播模型,其中考虑了相脚以及所有信号和功率路径。控制地和电源地之间的连接会导致相脚不均,本文还将对此进行讨论。为了降低CM电流,采用了具有低隔离电容的CM扼流圈和电源。另外,采用具有高CM瞬态抗扰度的差分电压检测方法。在500W全桥逆变器上的实验结果证明了所提出的分析方法的有效性。

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