P-33: Poly-Si Microemitter Arrays Fabricated by a Low-Temperature Process for Field-Emitter Displays

摘要

Gated polycrystalline silicon field-emitter arrays were fabricated by the low-temperature process with a novel etching technique for tip formation. The microemitter with a tip radius of ～100 A showed electron emissions at a gate voltage of 45 V. Degradation in the emission characteristics was also studied and found to be mainly caused by thermal instability of the Si tip. The developed method can be applicable to glass-based field-emitter displays with semiconductor IC technologies.