首页> 外文会议>1997 ASNT's spring conference and Sixth annual research symposium >Applications of amorphous silicon image sensors for x-ray image capture in NDT
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Applications of amorphous silicon image sensors for x-ray image capture in NDT

机译:非晶硅图像传感器在NDT中X射线图像捕获中的应用

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Amorhous silicon image sensors, developed by dpiX, A Xerox Company, offer an improved methodof acquiring digital x-ray images. Amorphous silicon image sensor technology provides the opportunity to have large format size similar to x-ray film, high resolution, wide dynamic range and in a compact package for ease of use in NDT applications. This paper will present a description of an amorphous silicon imaging system that incorporates an image sensor with an 8x10 inch x-ray image acquisition area. The image sensor has 1536 x 1920 127 micron pixels. Each pixel ocnsists of a photodiode for creating a charge in proportion to incoming ligh and a TFT to readout the charge. A low noise charge amplifier is used to provide a signal to a 12 bit ADC for obtaining a wide signal-to-noise ratio image with better dynamic range than can be achieved with film. A Gd sub 2 O sub 2 S: Tb phosphor screen is used to convert penetrating radiation into fluorescent light for detection by the amorphous silicon image sensor. Examples of NDT applications are presented showing the performance advantages of amorphous silicon image sensors.
机译:Xerox公司dpiX开发的Amorhous硅图像传感器提供了一种改进的获取数字X射线图像的方法。非晶硅图像传感器技术提供了具有类似于X射线胶片的大幅面尺寸,高分辨率,宽动态范围和紧凑封装的机会,以便于在NDT应用中轻松使用。本文将介绍非晶硅成像系统,该系统结合了具有8x10英寸X射线图像采集区域的图像传感器。图像传感器的像素为1536 x 1920 127微米。每个像素都有一个光电二极管,用于产生与入射光成比例的电荷,而一个TFT则读出电荷。低噪声电荷放大器用于将信号提供给12位ADC,从而获得宽动态范围比胶卷所能达到的信噪比图像。 Gd sub 2 O sub 2 S:Tb荧光屏用于将穿透辐射转换为荧光,以供非晶硅图像传感器检测。提供了NDT应用示例,这些示例显示了非晶硅图像传感器的性能优势。

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