Photoluminescent Porous Polycrystalline Silicon

摘要

Light from porous silicon (Si) has been an intensively research topic since the report by Canham [1]. Recently, visible photoluminescence (PL) has also been found from porous Si layers formed by anodized or stain-etched polycrystalline Si (poly-Si) [2-4]. The new luminescent porous poly-Si (PPS) film can have revolutionary impacts to the nowadays Si integrated circuit (IC) technology. It can be formed on glass substrates or integrated into parts of the Si IC, hence bring numerous novel opto-electronic device designs and applications. The research of PPS film is at an early stage and there are only few published reports. In this paper, we will present new results on the PL study of this important material.