SiGe HBT ICs for 20-Gb/s Optical Communication System

摘要

Rapid progress in multimedia communication requires large capacity optical transmission lines over 10 Gb/s. One of the candidates considered for use in the forthcoming high speed transmission systems is a 20Gb/s optical IM-DD transmission system. High-speed monolithic ICs are the keys to implementing this large capacity transmission system[1,2]. Si-bipolar technologies, with high reliability and productivity, have achieved remarkable progress in their operation speed[2]. Among the Si-bipolar transistors, SiGe-HBT is the most suitable for achieving the high speed operation at over 20Gb/s. This paper describes the design and performance of SiGe-HBT ICs for 20Gb/s-optical transmission systems.