'High Speed HBT-based OEIC Photoreceivers for long wavelength system applications'

摘要

Monolithically integrated photoreceivers have been pursed as an advantageous alternative for use in high speed long wavelength transmission systems. One potential transistor technology compatible with opto-electronic integrated circuits (OEICs) in the InP/InGaAs material system is the heterojunction bipolar transistor (HBT). We have been working in the integration of p-i-n photodetectors and HBT-based preamplifiers for a variety of applications. With this technology (for more details of epitaxial and integration processing technology, see[1]), a preamplifier in a dual feedback circuit architecture has been integrated to the p-i-n.