首页> 外文会议>18th Annual Semiconductor Pure Water and Chemicals Conference, 18th, Mar 1-4, 1999, Santa Clara, California >The Behavior of Surfactant Adsorption and Minimization of Particle Contamination in HF Solution
【24h】

The Behavior of Surfactant Adsorption and Minimization of Particle Contamination in HF Solution

机译:表面活性剂在HF溶液中的吸附行为和颗粒污染的最小化

获取原文
获取原文并翻译 | 示例

摘要

In this study, we observed the zeta potentials of Si, SiO_2 and Si_3N_4 surfaces and polystyrene latex (PSL) and A1_2O_3 particles in HF-H_2O solution with surfactant. Furthermore, particle deposition prevention onto above surfaces in HF-H_2O solution by adding surfactant was investigated. The zeta potentials in HF solution were not different from the results of measurement in HC1 solution especially in the case of adding surfactant. It has been demonstrated that the surfactant adsorption onto wafer surface is different by hydrophilic or hydrophobic property and zeta potential of wafer surface, namely the results are hereinafter described; 1. hydrophobic surface: the surfactant molecules are easily adsorbed. 2. hydrophilic surface: the hydrophilic parts of ionic surfactant molecules which have different polarity from the zeta potential of wafer surface are adsorbed onto wafer surface and the polarity of zeta potential is inverted. Furthermore, it was demonstrated that the particle deposition onto wafer surfaces was dependent on the both surfaces property(hydrophobic or hydrophilic) as well as zeta potential and van der waals potential. When the both surfaces were hydrophobic, the particles easily deposited onto the wafer surface, even if the zeta potentials of both surfaces were same polarity. However, the particle deposition was minimized when the both surfaces were controlled to be hydrophilic by adding the anionic surfactant more than CMC. In this case, the zeta potentials of both surfaces were controlled to be same polarity.
机译:在这项研究中,我们观察了在表面活性剂的HF-H_2O溶液中Si,SiO_2和Si_3N_4表面以及聚苯乙烯胶乳(PSL)和Al_2O_3颗粒的zeta电位。此外,研究了通过添加表面活性剂防止在HF-H_2O溶液中上述表面上的颗粒沉积。 HF溶液中的ζ电势与HCl溶液中的测量结果没有什么不同,特别是在添加表面活性剂的情况下。已经证明,表面活性剂在晶片表面上的吸附在亲水性或疏水性和晶片表面的ζ电位上是不同的,即结果在下文中描述。 1.疏水表面:表面活性剂分子易于吸附。 2.亲水性表面:具有与晶片表面的ζ电位不同极性的离子表面活性剂分子的亲水性部分被吸附到晶片表面上,并且ζ电位的极性反转。此外,已证明颗粒沉积在晶片表面上取决于两个表面性质(疏水性或亲水性)以及ζ电势和范德华势。当两个表面均为疏水性时,即使两个表面的ζ电势为相同极性,颗粒也容易沉积在晶片表面上。然而,当通过添加比CMC更多的阴离子表面活性剂来控制两个表面为亲水性时,颗粒沉积最小化。在这种情况下,两个表面的ζ电势被控制为相同的极性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号