High ionizing dose effects on ultra thin SiO2/Si structures revealed by Conductive Atomic Force Microscopy

机译：导电原子显微镜显示高电离剂量对超薄SiO 2 / Si结构的影响

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The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO2/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.

机译：利用导电AFM研究了高总电离剂量辐照的超薄SiO 2 / Si结构的电应力行为。首次显示出具有纳米空间分辨率的阈值电压漂移效应的证据。

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来源
《12th European Conference on Radiation and Its Effects on Components and Systems》|2011年|p.47-50|共4页
会议地点 Sevilla(ES)
作者
Arinero R.; Touboul A. D.; Ramonda M.; Guasch C.; Gonzalez-Velo Y.; Boch J.; Saigne F.;
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作者单位

Institut d''Electronique du Sud (IES), UMR CNRS 5214, Université Montpellier II, CC 083, Place E. Bataillon, 34095 Cedex, France;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电技术;
关键词
Conductive-AFM (C-AFM); Ramp Voltage Stress; SiOinf2/inf-Si structures; Weibull statistic; nano I–V curves; oxide reliability; ultra-thin oxide films;

机译：导电AFM（C-AFM）；斜坡电压应力； SiO 2 -Si结构； Weibull统计；纳米IV曲线；氧化物可靠性；超薄氧化膜;

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专利

1. Conductive atomic force microscopy as a tool to reveal high ionising dose effects on ultra thin SiO2/Si structures [J] . Richard Arinero, A. D. Touboul, M. Ramonda, Applied Nanoscience . 2013,第3期

机译：导电原子力显微镜作为揭示超薄SiO2 / Si结构高电离剂量效应的工具
2. Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy [J] . Manivannan Anbarasu, Myana Santosh Kumar, Miriyala Kumaraswamy, Applied Physics Letters . 2014,第24期

机译：导电原子力显微镜观察GeTe 6 薄膜的低功率电子阈值开关特性
3. Nanostructured Self-Assembly of Inverted Formin 2 (INF2) and F?Actin?INF2 Complexes Revealed by Atomic Force Microscopy [J] . Shivani Sharma, Elena E. Grintsevich, JungReem Woo, Langmuir: The ACS Journal of Surfaces and Colloids . 2014,第25期

机译：反向力法2（INF2）和F？Actin？INF2复合物的纳米结构自组装的原子力显微镜揭示。
4. High ionizing dose effects on ultra thin SiO2/Si structures revealed by Conductive Atomic Force Microscopy [C] . Arinero R., Touboul A. D., Ramonda M., European Conference on Radiation and its Effects on Components and Systems . 2011

机译：通过导电原子力显微镜显露的超薄SiO 2 / Si结构的高电离剂量效应
5. Conductivity measurements of single DNA molecules using conductive-atomic force microscopy [D] . Lu, Shun 2006

机译：使用导电原子力显微镜对单个DNA分子的电导率测量
6. Nanostructured Self-Assembly of Inverted Formin 2(INF2) and F-Actin–INF2 Complexes Revealed by AtomicForce Microscopy [O] . Shivani Sharma, *, ElenaE. Grintsevich, -1

机译：反向Formin 2的纳米结构自组装（INF2）和F-Actin–INF2复合物的原子揭示力显微镜
7. Conductive atomic force microscopy as a tool to reveal high ionising dose effects on ultra thin SiO2/Si structures [O] . Arinero, Richard, Touboul, A. d., Ramonda, M., 2013

机译：导电原子力显微镜作为揭示超薄SiO2 / Si结构高电离剂量效应的工具

High ionizing dose effects on ultra thin SiO2/Si structures revealed by Conductive Atomic Force Microscopy

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