Power density comparative analysis concerning to three transistor technologies applied to a CCM PFC BOOST converter using optimization techniques

摘要

A transistor technology comparative analysis applied to a CCM PFC BOOST converter, aiming to identify the technology that shows the highest volumetric power density for a particular application is discussed. For this analysis, a comparison among three different transistors technologies namely traditional MOSFET, CoolMOSC3 and CoolMOSCP is performed. The calculation of the transistors losses and its heat transfer system are discussed. An analysis of different operation points (Δi @ fs) is performed, pointing the optimum point for the maximum power density for each transistor technology. From these derivative points the comparisons are done. The power diode and the magnetic material utilized for the Boost inductor and EMI filter cores are the same for all three designs.