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Highly Optimized Electrical Characteristics of a-Si TFT Gate Driver for Display Panel Manufacturing

机译:用于显示面板制造的a-Si TFT栅极驱动器的高度优化的电气特性

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摘要

In this paper, we successfully optimize two gate driver circuits with amorphous silicon (a-Si:H) TFT to meet required electrical specifications by unified optimization framework [1]. Then the sensitivity analysis is conducted to verify the performance variation with respect to the characteristics of optimized circuits. Finally, the optimized circuits are fabricated to implement the comparisons of measurement and simulation data.
机译:在本文中,我们通过统一的优化框架成功地使用非晶硅(a-Si:H)TFT优化了两个栅极驱动器电路,以满足所需的电气规格[1]。然后进行灵敏度分析,以验证相对于优化电路特性的性能差异。最后,制造优化电路以实现测量数据和仿真数据的比较。

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