Photon-Enhanced Bias Instability of InGaZnO TFT with Dual Gate Structure

摘要

We have fabricated dual gate IGZO TFT to investigate the photo-enhanced bias instability of IGZO TFT. Contrary to the single gate device in a bottom gate and top gate structure, the dual mode device showed less Vth shift under the visible white light illumination with negative bias stress. We attributed this less negative Vth shift to the reduced hole or positive charged species trapping at the interface due to the reduced effective gate field in the dual gate oxide TFT.