Gauss-Quadrature rule in narrow band MIS structures modeling

机译：窄带MIS结构建模中的Gauss-Quadrature规则

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In the paper Gauss-Quadrature formulas for band carrier concentration and band carrier concentration integral are presented. These integrals can be used for semiconductors electro-physical parameter calculation. Obtained formulas require less machine time in comparison with Simpson method for semiconductor characteristic calculation in the non-parabolic band case.

机译：本文提出了带载子浓度和带载子浓度积分的高斯-正交公式。这些积分可用于半导体电物理参数计算。与用于非抛物线带情况的半导体特性计算的辛普森方法相比，获得的公式所需的机器时间更少。

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《10th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM 2009)》|2009年|301-303|共3页
会议地点 Novosibirsk(RU);Novosibirsk(RU)
作者
Nastovjak A.E.; Polovinkin V.G.;
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Rzhanov Inst. of Semicond. Phys. Siberian Branch of Russian Acad. of Sci., Novosibirsk, Russia;

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Poisson equation; carrier density; Gauss-quadrature rule; band carrier concentration integral; narrow band MIS structures modeling; non-parabolic band case; carrier concentration; non-parabolic bands;

机译：泊松方程载流子密度高斯正交规则带载子浓度积分窄带MIS结构建模非抛物带情况载流子浓度非抛物带;

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Gauss-Quadrature rule in narrow band MIS structures modeling

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