首页> 外文会议>10th EMAS regional workshop on electron probe microanalysis of materials today : Practical aspects >ADVANCES IN EBSD HARDWARE AND SOFTWARE, ENABLING EFFICIENT LOW KV ANALYSIS FOR HIGH SPATIAL RESOLUTION AND BEAM SENSITIVE MATERIALS
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ADVANCES IN EBSD HARDWARE AND SOFTWARE, ENABLING EFFICIENT LOW KV ANALYSIS FOR HIGH SPATIAL RESOLUTION AND BEAM SENSITIVE MATERIALS

机译:EBSD硬件和软件的发展,可实现有效的低KV分析,以实现高空间分辨率和光束敏感材料

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摘要

It has been demonstrated that reducing the accelerating voltage dramatically improves spatial resolution with the most significant gain below 10 kV (Fig. 3). This comes about by the corresponding reduction in the subsurface interaction volume, giving rise to a smaller 'footprint' from which diffracted electrons created at the surface can escape. However, the Kikuchi band width increases with decreasing voltage (Fig. 4), with implications for band detection and subsequent indexing. Further the EBSP intensity, contrast and sharpness all suffer with reducing accelerating voltage (Fig. 5). Improvements to the sensitivity of the system allow low beam current to be used, and the ability to successfully detect the bands and to correctly index low quality EBSPs has been shown with step sizes of 20 nm for tungsten carbide, (successfully resolving three phases, Fig. 6) and 5 nm (Fig. 7) on nano-structured nickel.
机译:已经证明,降低加速电压可以显着改善空间分辨率,在10 kV以下具有最大的增益(图3)。这是由于地下相互作用体积的相应减少而引起的,从而产生了较小的“足迹”,在表面产生的衍射电子可以从中逃逸。但是,菊池的带宽随着电压的降低而增加(图4),这对带检测和随后的索引具有影响。此外,EBSP的强度,对比度和清晰度都会受到加速电压降低的影响(图5)。系统灵敏度的提高允许使用低束电流,并且碳化钨的步长为20 nm,已显示出成功检测波段并正确索引低质量EBSP的能力(成功解决了三个阶段,图6)和5 nm(图7)在纳米结构的镍上。

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