Photoacoustic topogram that represents non planarsur-face bond ratio of IC silicon die of 6x8 mm withceramiccase bonding pad.The topogram is a result of probingbymeans of UV laser beam of 60 microns indiameter.Thereis partial absence of wettability of non planar dieside byeutectie solder and consequently absence of attachmentrigidity as well as satisfactory heat transfer modeconditions that stimulate IC parameter degradation.
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