Carrier-Selective NiO/Si and TiO2/Si Contacts for Silicon Heterojunction Solar Cells

摘要

Carrier-selective contacts based on thin oxides of nickel and titanium are computationally investigated for heterojunction silicon solar cells. Replacing the standard amorphous/ c-Si heterojunction with NiO/c-Si (front) and TiO2/c-Si (back), we explore the physical requirements to enhance the cell efficiency beyond the physical limits of the conventional structure. Under ideal conditions, a wider bandgap (>3 eV) of these metal oxides provides a high optical transparency, whereas a near-perfect alignment of their energy bands with silicon ensures a high fill factor (FF), which is often difficult to obtain in some of the other wide-bandgap alternatives, e.g., SiOx, due to imperfect band offsets that hinder carrier extraction. We explore the practical nonidealities that could possibly degrade cell efficiency below its ideal limit. In particular, effects of interfacial defects, Fermi-level pinning at c-Si/TiO2/metal contact, variability in the bandgap of NiO, and nonoptimized metal oxide doping density are investigated quantitatively. Using the reported experimental data for these nonideal effects, we highlight that the cell efficiency of ~28% could be achieved under AM1.5 illumination with an optimal cell design. These modeling insights provide useful guidelines for the future development of exploratory window layers for silicon solar cells using NiO (front) and TiO2 (back) heterojunctions.