CARRIER-SELECTIVE CONTACT JUNCTION SILICON SOLAR CELL AND MANUFACTURING METHOD THEREFOR

摘要

The present invention relates to: a carrier-selective contact junction silicon solar cell using a copper iodide thin film as a carrier-selective contact layer; and a manufacturing method therefor. The carrier-selective contact junction silicon solar cell, according to the present invention, comprises: a conductive silicon substrate; first and second passivation layers positioned on the top surface and the bottom surface, respectively, of the conductive silicon substrate; a hole-selective contact layer formed on the top surface of the first passivation layer; an upper transparent electrode formed on the top surface of the hole-selective contact layer; an upper metal electrode formed on the top part of the upper transparent electrode; an electron-selective contact layer formed on the bottom surface of the second passivation layer; and a lower metal electrode formed on the bottom surface of the electron-selective contact layer, wherein, in order to enable the selective movement of a hole, the hole-selective contact layer is a single-film copper iodide thin film formed by low-temperature annealing a sandwich-structured multilayer film having a copper iodide thin film layered on the top surface and the bottom surface of an iodine thin film.