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Polarization of light scattered by particles on silicon wafers

机译:硅片上的颗粒散射的光的偏振

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Abstract: Bidirectional ellipsometry has been developed as a technique for distinguishing among various scattering features near surfaces. Employing incident light with fixed polarization, the technique measures the principal angle of polarization and the degree of linear polarization of light scattered into directions out of the plane of incidence. This technique has been previously shown to be successful at distinguishing between subsurface defects and microroughness. Theoretical models have predicted that the polarization of light scattered by particles should also be different than that scattered by subsurface defects and microroughness. In this paper, experimental results will be presented which show good agreement with these models for a range of sizes of polystyrene latex spheres on silicon wafers. The results demonstrate that the polarization of light scattered by particles can be used to determine the size of particulate contaminants on silicon wafers and other smooth surfaces. The model calculations, based on different degrees of approximation, demonstrate that the mean distance of a particle from the surface is the primary determinant of the scattered light polarization for small scattering angles. !25
机译:摘要:双向椭偏仪已被开发为区分表面附近各种散射特征的技术。利用固定偏振的入射光,该技术可测量入射到出射平面之外方向的光的偏振主角和线性偏振度。先前已证明该技术在区分表面缺陷和微观粗糙度方面是成功的。理论模型已经预测,由粒子散射的光的偏振也应该与由于表面缺陷和微粗糙度散射的光的偏振不同。在本文中,将给出实验结果,这些结果表明这些模型对于硅晶片上各种尺寸的聚苯乙烯乳胶球具有良好的一致性。结果表明,颗粒散射的光的偏振可用于确定硅晶片和其他光滑表面上的颗粒污染物的大小。基于不同逼近度的模型计算表明,对于较小的散射角,粒子到表面的平均距离是散射光偏振的主要决定因素。 !25

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