Simulation of Light Scattered by Particles on Silicon Wafer Deposited with SiO_2 Thin Film

摘要

More than 80/100 of the pattern defects in a semiconductor manufacturing process are caused by the adhesion of particles on a wafer. In factory, the particles larger than 0.1μm in diameter on the wafer on which a SiO_2 thin film was deposited, have to be inspected. In this study, a system for detecting the light intensity scattered by particles 0.1-0.2μm in diameter on the wafer on which a SiO_2 thin film was deposited, without being influenced by the thickness variation of the thin films, is developed by simulation.