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Polarization of light scattered by particles on silicon wafers

机译:硅晶片上的颗粒散射的光极化

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摘要

Bidirectional ellipsometry has been developed as a technique for distinguishing among various scattering features near surfaces. Employing incident light with fixed polarization, the technique measures the principal angle of polarization and the degree of linear polarization of light scattered into directions out of the plane of incidence. This technique has been previously shown to be successful at distinguishing between subsurface defects and microroughness. Theoretical models have predicted that the polarization of light scattered by particles should also be different than that scattered by subsurface defects and microroughness. In this paper, experimental results will be presented which show good agreement with these models for a range of sizes of polystyrene latex spheres on silicon wafers. The results demonstrate that the polarization of light scattered by particles can be used to determine the size of particulate contaminants on silicon wafers and other smooth surfaces. The model calculations, based on different degrees of approximation, demonstrate that the mean distance of a particle from the surface is the primary determinant of the scattered light polarization for small scattering angles.
机译:已经开发了双向椭圆测定法作为区分靠近表面附近的各种散射特征的技术。采用具有固定偏振的入射光,该技术测量主要极化角度和光的线性偏振程度散射到入射平面中的方向。此前已经显示出该技术在区分地下缺陷和微小方面是成功的。理论模型已经预测,由颗粒散射的光的极化也应该与地下缺陷和微小散射的光。在本文中,将提出实验结果,其与硅晶片上的一系列尺寸的聚苯乙烯胶乳球体展示了良好的一致性。结果表明,通过颗粒散射的光的极化可用于确定硅晶片和其他光滑表面上的颗粒状污染物的尺寸。基于不同程度的近似的模型计算表明,来自表面的颗粒的平均距离是用于小散射角度的散射光极化的主要决定因素。

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