【24h】

High Speed Switching Characteristics of Pt/Ta_2O_5/Cu Memristive Switch

机译:PT / TA_2O_5 / CU忆内开关的高速切换特性

获取原文

摘要

Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of capturing the Set/Reset characteristics of memristive switches with high accuracy. This technique can accurately measure the transient current during the Set/Reset operation with rise times as short as 2 ns. The circuit is designed to cycle through (Set/Reset) and sense (read the state) rapidly in order to enable the study of endurance. The sense circuit is capable to measure currents as low as 30pA yielding accurate measurements of the resistance in the off state up to 1.6GΩ. Solid electrolyte Pt/Ta_2O_5/Cu memristive switches are examined that exhibit ON and OFF state resistance (R_(on) and R_(off)) ratios of >10~4 and endurance cycles of >6×10~4.
机译:切换膜片开关的瞬态细节的精确测量对于切换机构的阐明至关重要。这种高速测量通常由伪像困扰。在这里,我们描述了一种测量技术,能够高精度地捕获存储器开关的设定/复位特性。该技术可以在设置/复位操作期间准确地测量瞬态电流,上升时间短至2 ns。该电路设计为循环(设置/复位),并快速感知(读取状态),以便能够研究耐久性。感测电路能够测量低至30Pa的电流,从而在关闭状态下的电阻的精确测量到1.6GΩ。检查固体电解质Pt / Ta_2O_5 / Cu忆阻开关,其呈现出和关闭状态电阻(R_(ON)和R_(OFF))比率> 10〜4和耐久循环> 6×10〜4。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号