We report avalanche multiplication measurements on 1 μm thick bulk Al{sub}0.8Ga{sub}0.2As diodes which exhibit low excess noise. A series of homojunction p-i-n and n-i-p structures with very low dark currents of ～4μA/cm{sup}2 at 0.95 V{sub}(bd) were characterized. Photo-multiplication measurements suggest that M{sub}e＞M{sub}h with a k value of ～0.2, smaller than those reported in other bulk III-V materials, such as GaAs, GaInP, Inp and Al{sub}xGa{sub}(1-x)As (x ≤ 0.6). Excess noise results corresponding to k≈0.15 were obtained for electron initiated multiplication. This broadly corroborates the multiplication measurements and suggests that even in these 1 μm thick structures some non-local ionization behaviour may be helping to further reduce the excess noise measured.
展开▼
