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METHOD OF MAKING SPLIT-GATE NON-VOLATILE MEMORY CELLS WITH ERASE GATES DISPOSED OVER WORD LINE GATES
METHOD OF MAKING SPLIT-GATE NON-VOLATILE MEMORY CELLS WITH ERASE GATES DISPOSED OVER WORD LINE GATES
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机译:使SPLIT-GATE非易失性内存的方法细胞与擦除盖茨在字线处理盖茨
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摘要
A memory device, and method of making the same, that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a first channel region in the substrate extending between the first and second regions, a first floating gate disposed over and insulated from a first portion of the first channel region adjacent to the second region, a first coupling gate disposed over and insulated from the first floating gate, a first word line gate disposed over and insulated from a second portion of the first channel region adjacent the first region, and a first erase gate disposed over and insulated from the first word line gate.
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