GeSbTe SPUTTERING TARGET INCLUDING CARBON-DOPED GeSbTe AND METHOD FOR FABRICATING ELECTRONIC DEVICE USING THE SAME

摘要

A sputtering target and a method of manufacturing an electronic device using the same are provided. The sputtering target according to an embodiment of the present invention includes a carbon-doped GeSbTe alloy, the average grain diameter of the GeSbTe alloy after sintering is X (㎛), and the average grain diameter of the carbon after sintering is Y (㎛) In the case of , X may be in the range of 0.5 to 5 μm, and Y/X may be in the range of greater than 0.5 and less than or equal to 1.5. In addition, the sputtering target according to another embodiment of the present invention includes a carbon-doped GeSbTe alloy, the average grain diameter of the GeSbTe alloy after sintering is X (㎛), and the average grain diameter of the carbon after sintering is Y (㎛) , and when the carbon content is Z (at%), the condition of Y = X × Z may be satisfied.