Assembly with ruthenium-containing conductive gate

摘要

Some embodiments include memory cells with a conductive gate containing ruthenium. The charge blocking region is adjacent to the conductive gate, the charge storage region is adjacent to the charge blocking region, the tunnel material is adjacent to the charge storage region, and the channel material is adjacent to the tunnel material. Some embodiments include an assembly having vertical stacks of alternating insulation levels and wordline levels. Ward wire levels include conductive word wire materials containing ruthenium. The semiconductor material stretches through the stack as a channel structure. The charge storage region lies between the conductive word wire material and the channel structure. The charge blocking region lies between the charge storage region and the conductive ward wire material. Some embodiments include a method of forming an integrated assembly.