首页> 外国专利> LONG-WAVE INFRARED DETECTING ELEMENT, LONG-WAVE INFRARED DETECTING ELEMENT ARRAY STRUCTURE, LONG-WAVE INFRARED TEMPERATURE DETECTING DEVICE, AND THERMAL IMAGING DEVICE

LONG-WAVE INFRARED DETECTING ELEMENT, LONG-WAVE INFRARED DETECTING ELEMENT ARRAY STRUCTURE, LONG-WAVE INFRARED TEMPERATURE DETECTING DEVICE, AND THERMAL IMAGING DEVICE

机译:长波红外探测元件,长波红外探测元件阵列结构,长波红外温度探测装置和热成像装置

摘要

A long-wave infrared detecting element includes a magnetic field generator configured to generate a magnetic field; a substrate on the magnetic field generator; a superparamagnetic material layer disposed to be separated from the substrate and magnetized by the magnetic field generated by the magnetic field generator; a support unit on the substrate to support the superparamagnetic material layer such that the superparamagnetic material layer separated from the substrate, such that the support unit and the superparamagnetic material layer generate heat by absorbing infrared radiation from the outside; and a magneto-electric conversion unit that generates an electrical signal proportional to both a strength of the magnetic field generated by the magnetic field generator and the magnetization of the superparamagnetic material layer.
机译:一种长波红外检测元件,包括磁场发生器,其被配置为产生磁场;磁场发生器上的基板;超顺磁性材料层,其被布置成与所述衬底分离并由所述磁场发生器产生的磁场磁化;基板上的支撑单元,用于支撑超顺磁性材料层,使得超顺磁性材料层与基板分离,使得支撑单元和超顺磁性材料层通过吸收来自外部的红外辐射而产生热量;以及磁电转换单元,其产生与由磁场发生器产生的磁场强度和超顺磁性材料层的磁化强度两者成比例的电信号。

著录项

  • 公开/公告号US2022178754A1

    专利类型

  • 公开/公告日2022-06-09

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US202117386144

  • 发明设计人 DONGKYUN KIM;HYUCK CHOO;

    申请日2021-07-27

  • 分类号G01J5/02;G01J5/08;G01J5/06;

  • 国家 US

  • 入库时间 2022-08-25 01:30:09

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