SOLID STATE IMAGING DEVICE WITH HIGH SIGNAL-TO-NOISE RATIO

摘要

The present application provides an image sensor including a plurality of pixels arranged in an array. An image sensor according to the present application comprises a plurality of pixels arranged in an array, wherein the pixel has a semiconductor-on-insulator (SOI) structure comprising a base substrate, an SOI layer, and an insulating layer interposed between the base substrate and the SOI layer, wherein the base substrate comprises: a photodiode generating pixel charges in response to incident electromagnetic wave; a well contact coupled to the photodiode for providing an electric isolation between the photodiodes and fixing of a potential of the photodiodes; a floating diffusion temporally storing pixel charges transferred from the photodiode when reading out; and a transfer gate comprising a channel region having a source end coupled to the photodiode and a drain end coupled to the floating diffusion, and controlling transfer of the pixel charges from the photodiode to the floating diffusion in response to an applied voltage, wherein the SOI layer comprises an in-pixel transistor readout portion comprising a plurality of transistors for carrying out readout and amplification of the pixel charges from the floating diffusion, and for carrying out reset of the floating diffusion, wherein the SOI layer comprises a predetermined surface orientation and a predetermined channel orientation which is a direction parallel to channels of the transistors, wherein the base substrate comprises a predetermined surface orientation and a predetermined channel orientation which is a direction parallel to the channels of the transistors of the SOI layer, and wherein the surface orientation and/or the channel orientation of the SOI layer are different from the surface orientation and/or the channel orientation of the base substrate.