A NEW CONSTRICTION CELL STRUCTURE AND FABRICATION METHOD WITH REDUCED PROGRAMMING CURRENT AND THERMAL CROSS TALK FOR 3D X-POINT MEMORY

摘要

Systems, methods, and apparatus are provided to reduce current required to operate 3D memory cells, through configuration of geometry of memory cells, through etching and other methods. Thermal cross talks are reduced by using laminates and gap fillers between the memory cells, which in turn produce less heat and better isolating heat generated by a cell, which in turn allow for a smaller scale manufacture of memory cells. In a cell structure and process flow, PCM memory cells are shaped in a constriction shape by wet or dry process during line/space patterning in both X and Y directions. As a result, programming current density is the highest in the middle of the memory cell pillar to incur phase change and melting only in the middle of the cell pillar to stay away from both top and bottom electrodes for decreasing cross talks between adjacent cells.