Fabrication method for thin-film transistor using femtosecond laser process for improving electrical characteristic

摘要

The present invention relates to a TFT manufacturing method using a femtosecond laser process, comprising: forming an insulating layer on a substrate including a function of a gate lower electrode; and an Indium-Gallium-Zinc oxide (IGZO) thin film on the insulating layer Forming an active layer, performing femtosecond laser annealing on the active layer to prevent structural change due to thermal damage, and forming a source electrode and a drain electrode on the active layer after the femtosecond laser annealing do. According to the present invention, by providing a TFT manufacturing method for irradiating a laser in a special range in the form of a spot using a femtosecond laser, it is possible to alleviate the thermal damage applied to the heat treatment, and it is advantageous for microprocessing and to the interaction between the laser and the surface. Accordingly, there is an effect of preventing the structural change of the oxide material.