MONITORING AND MITIGATION OF ROW DISTURBANCE IN MEMORY

摘要

A memory device comprises a memory array, a counter unit, and a service unit. The memory array comprises cells arranged in rows and columns, wherein a subset of the cells in each of the rows holds a row activation count for each row. The counter unit, in response to an activation of the row caused by a read operation on at least a portion of the row, increments the row activation count for at least one of the rows prior to a completion of the read operation, and writes-back the row activation count in an incremented state to the subset of the cells in the row that held the row activation count prior to the activation. The service unit is coupled to the counter unit and performs a service with respect to one or more other rows, offset from the row, in response to the row activation count associated with the row satisfying service criteria.