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SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESSOR AND BURIED GATE
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESSOR AND BURIED GATE
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机译:半导体存储器结构具有漏极应力源,源应力源和埋地门
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摘要
The present disclosure provides a semiconductor memory structure. The semiconductor memory structure includes a substrate, a gate structure, a drain stressor and a source stressor. The gate structure is disposed in the substrate. Each of the source stressor and the drain stressor includes a strained part disposed in the substrate.
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